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| NTL4502N Quad Power MOSFET 24 V, 15 A, N-Channel, PInPAKt Package Features * Four N-Channel MOSFETs in a Single Package * High Drain Current (Up to 80A per Device, Single Pulse tp < 10 s, * * * * * * * * * * * * * http://onsemi.com V(BR)DSS RDS(ON) TYP 8.0 m @ 4.5 V 24 V 11.2 m @ 10 V 15 A ID MAX (Note 1) Applications DC-DC Converters Motherboard/Server Voltage Regulator Telecomm/Industrial Power Supply H-Bridge Circuits Low Voltage Motor Control MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t10 s Power Dissipation (Note 1) Steady State t10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current tp=10 s Steady State TA=25C TA=85C TA=25C PD IDM TJ, TSTG IS EAS ID TA=25C TA=85C TA=25C TA=25C PD Symbol VDSS VGS ID Value 24 20 15 10.9 18.8 2.9 4.5 11.4 8.2 1.7 32 -55 to 150 15 80 W A C A mJ A W Units V V A S1 D1 G1 S2 D2 G2 1 23 4 56 D1 16 D4 15 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy - (VDD= 25 V, VG=10 V, IPK=60 A, L=0.1 mH, RG= 1.0 kW) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) ORDERING INFORMATION Device NTL4502NT1 Package PInPAK Shipping 1500 / Reel TL 260 C (c) Semiconductor Components Industries, LLC, 2003 1 August, 2003 - Rev. 2 CCC C CCCCCCC C CCCCCC CCCC CC CCCCCCC CC CCCCCCC CC C C CCCCCCC CCCC CCCCCC CCCC CCCCCCC C CCCCCC CCCCCC CCC C C C C C C C CCCC CC CCCC CCC CCCC CCCC CCC CCC 1 16 CASE 495 PInPAK STYLE 1 xx A Y WW RqJC = 1.5 C/W) High Input Impedance for Ease of Drive Ultra Low On-resistance (RDS(on)) Provides Low Conduction Losses Very Fast Switching Times Provides Low Switching Losses Low Parasitic Inductance Low Stored Charge for Efficient Switching Very Low VSD Ideal for Synchronous Rectification 200% Footprint Reduction Compared to Similar DPAK Solution for the Same Power Advanced Leadless Power Integrated Package (PInPAK) MARKING DIAGRAM 16 1 NTL4502N AYWW = Specific Device Code = Assembly Location = Year = Work Week 7 D2 8 D3 14 13 12 11 10 9 S4 D4 G4 S3 D3 G3 (Bottom View) Pinout Diagram Publication Order Number: NTL4502N/D NTL4502N THERMAL RESISTANCE RATINGS Parameter Junction-to-Case (Drain) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t10 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJC RqJA RqJA RqJA Max 1.5 43 27.5 75 Units C/W 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using minimum recommended pad size (Cu area = 0.440 in sq). 1 (S1) 2 (D1) 3 (G1) 4 (S2) 5 (D2) 6 (G2) (D1) 16 7 (D2) (D4) 15 8 (D3) 14 (S4) 13 (D4) 12 (G4) 11 (S3) 10 (D3) 9 (G3) SCHEMATIC (TOP VIEW) http://onsemi.com 2 NTL4502N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VDS = 20 V, VGS = 0 V TJ=25C TJ=125C VGS = 0 V, ID = 250 mA 24 27.5 25.5 1.5 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Drain-to-Source On-Resistance IGSS VGS = 20 V, VDS = 0 V VGS(th) VGS(th)/TJ RDS(on) () VDS = VGS, ID = 250 mA 1.0 1.5 -4.1 2.0 V mV/C VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 15 A 11.2 8.0 27 13 11 mW Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge gFS VDS = 10 V, ID = 15 A S Ciss Coss Crss QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, ID = 15 A, VDS = 24 V VDS = 20 V, VGS = 0 V, f = 1.0 MHz 1070 408 142 13 1.6 3.3 7.0 1605 612 213 pF nC SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 10 V, VDD = 12 V, ID = 15 A, RG = 3.0 W 5.0 28 22 6.0 8.5 47 37 10 ns SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W 9.5 33 14 7.5 16 55 23.5 12.5 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 15 A TJ=25C TJ=125C 0.8 0.7 31 VGS = 0 V, dIS/dt = 100 A/ms, IS = 15 A 17 14 20 nC ns 1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTL4502N 120 100 80 60 40 VGS = 3.0 V 20 0 0 2 4 6 VGS = 2.5 V 8 10 VGS = 10 V ID, DRAIN CURRENT (A) VGS = 8.0 V VGS = 6.0 V VGS = 5.5 V VGS = 5.0 V VGS = 3.5 V VGS = 4.5 V 60 VDS w 10 V ID, DRAIN CURRENT (A) VGS = 4.0 V 40 20 TJ = 25C TJ = 125C TJ = -55C 0 0 1 2 3 4 VGS, GATE-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.028 VGS = 10 V 0.024 0.02 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.028 VGS = 4.5 V 0.024 0.02 0.016 TJ = 25C 0.012 0.008 0.004 10 TJ = -55C TJ = 150C TJ = 125C 0.016 0.012 TJ = 150C TJ = 125C TJ = -55C 20 30 40 50 60 70 80 90 100 110 120 TJ = 25C 0.008 0.004 10 20 30 40 50 60 70 80 90 100 110 120 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On-Resistance versus Drain Current and Temperature Figure 4. On-Resistance versus Drain Current and Temperature RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 30 A VGS = 4.5 V and 10 V 10000 TJ = 150C IDSS, LEAKAGE (nA) 1000 TJ = 125C 100 TJ = 100C 10 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 NTL4502N VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) 2000 Ciss C, CAPACITANCE (pF) 1600 Ciss Crss Coss 400 Crss 0 -10 -5 0 5 10 15 20 VDS = 0 V VGS = 0 V TJ = 25C 6 5 4 3 2 1 0 ID = 15 A TJ = 25C 0 4 8 12 8 VDS VGS QGS QGD QG(TOT) 24 32 1200 16 800 0 VGS VDS Qg, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1000 IS, SOURCE CURRENT (A) VDS = 12 V ID = 15 A VGS = 4.5 V t, TIME (ns) 100 tr 10 td(off) td(on) tf 60 50 40 30 20 TJ = 150C 10 0 TJ = 25C 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 VGS = 20 V SINGLE PULSE 10 ms ID, DRAIN CURRENT (A) TC = 25C 100 ms 10 1 ms 10 ms RDS(ON) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 dc 1 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTL4502N PACKAGE DIMENSIONS PInPAK CASE 495-01 ISSUE O 0.08 (0.003) Y A -W- -Y- N -V- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. COPLANARITY APPLIES TO LEAD. DIE ATTACHED PAD. 4. OPTIONAL FEATURES ARE FOR REFERENCE ONLY. DIM A B C D E F G H J K L M P R S T MILLIMETERS MIN MAX 10.40 10.60 10.40 10.60 0.40 0.50 1.27 BSC 0.50 0.52 1.70 1.90 2.45 2.55 0.80 1.00 2.90 3.10 4.75 4.95 1.10 1.30 2.00 2.20 0.30 0.50 0.70 0.90 0.58 0.78 1.68 1.78 INCHES MIN MAX 0.409 0.417 0.409 0.417 0.016 0.020 0.050 BSC 0.020 0.020 0.067 0.075 0.096 0.100 0.031 0.039 0.114 0.122 0.187 0.195 0.043 0.051 0.079 0.087 0.012 0.020 0.028 0.035 0.023 0.031 0.066 0.070 B 0.20 (0.008) Y M 0.08 (0.003) Y J 4 PL R 0.38 (0.015) 6 PL EXPOSED DIE ATTACH PAD H 6 PL K 8 PL D/2 T 4 PL R 4 PL 0.10 (0.004) 0.05 (0.002) M M Y V W CPL 8 Y L 12 PL F 3 PL D P S 4 PL G VIEW N-N PInPAK is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 6 CC CC CC C CC CC CC C CC CC C CC C E/2 E N CC CCCC CCCCC C C CC CCCCC C CC C CCC CCC C CCCCC CCCCC CCCCC CCC CC NTL4502N/D |
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